本文针对铜工艺TFT-LCD制作过程中遇到的不可见的数据信号线和公共电极信号线短路(DCS)，提出切割实验方案，精确定位不可见类型的DCS异常的实际位置。基于数据和失效模式分析结果，设计不同灰化工艺时间膜层形貌观察实验，探究发生机理。本文产出的异常发生机理是灰化过程中反应气体SF6残留在“屋檐状”光刻胶下方对公共电极Cu金属造成腐蚀，在产线湿度高的情况下易加剧腐蚀，腐蚀产物向上生长，后续栅极绝缘层/活性层镀膜无法完全覆盖住腐蚀产物，造成源、漏(Source & Drain，SD)层镀膜后数据线与腐蚀产物相连接，最终形成TFT基板膜层正面不可见的DCS异常。依据以上调查结果进行灰化工艺SF6气体用量、产线相对湿度(RH)、灰化工序至2nd 栅极湿刻工序等待时间和设计相关的改善验证，最终通过量产导入灰化工艺SF6气体用量降低、产线相对湿度(RH)降低、缩短灰化工序至2nd 栅极湿刻工序等待时间和优化异常发生区域开槽设计以增大间距H等改善措施，大幅减少了不可见类型的DCS异常。

Contrapose data line and common line invisible short(DCS Invisible) in production of copper process array substrate, a new method based on cutting for locating the position of DCS Invisible is presented. Based on the result of data and failure analysis, an observation experiment of layer section with different ashing process time is designed to explore the mechanism. In ashing process, reaction gas SF6 below the photoresist which looks like the shape of roof will corrode copper metal of common line. Under the condition of high humidity, the corrosion will be aggravated. Corrosion products grow up and can’t be covered by thin film of GI/Active. After thin film process of SD(Source & Drain), the data line will connect with corrosion products and finally cause DCS which is invisible on the front side of array substrate. Based on the research, the experiment of reaction gas consumption of SF6 in ashing process, relative humidity, waiting time from Ashing to 2nd Gate Wet Etch and design improvement is proceeded. Finally, DCS Invisible is solved by reducing reaction gas consumption of SF6, decreasing relative humidity, controlling waiting time from Ashing to 2nd Gate Wet Etch and insuring space H of slotting design larger.