目前，c面氮化镓(GaN)基发光二极管的制备技术已经十分成熟并取得了商业化成功，但仍面临极化电场导致的大电流密度下效率下降(Droop效应)和黄绿光波段效率低的问题。为消除极化电场的影响，人们开始关注半极性和非极性面GaN。其中，基于传统极性面衬底通过三维结构生长来获得半极性和非极性GaN的方法，由于其低成本和生长的灵活性，受到了广泛研究。本文首先总结了三种GaN三维结构的制备方法并分析其生长机理。接着，在此基础上介绍了不同晶面InGaN量子阱的外延生长和发光特性。最后，列举了GaN基三维结构在半极性面LED、颜色可调LED和无荧光粉白光发光二极管方面的应用。

At present, cplane GaNbased lightemitting diodes(LED) have already been mature and commercialized, but they still suffer from the issues of efficiency droop at high injection and low efficiency in the yellowgreen wavelength caused by polarization electric fields. In order to eliminate the influence of polarization electric field, nonpolar/semipolar GaN has attracted people’s research interest. The growth of threedimensional GaN structures based on traditional cplane substrates to obtain nonpolar/semipolar facets has recently been intensively studied due to its simple process and low cost. In this paper, three kinds of growth methods of GaN threedimensional structures are summarized with the analysis of mechanisms at first. And then, the epitaxy and luminescence characteristics of InGaN quantum wells with different crystal planes based on these structures are introduced. Finally, the applications of GaNbased threedimensional structure in semipolar LEDs, colortunable LEDs and phosphorfree white LEDs are shown.