自2017年报道SiC(碳化硅)功率金属氧化物半导体场效应晶体管(MOSFET)技术进展以来，针对器件比导通电阻(RON,SP)高等问题不断优化器件结构设计，本课题组改进关键加工工艺，使1200 V SiC MOSFET的RON,SP从8 mΩ·cm2降低到4.8 mΩ·cm2。与此同时，本课题组采用新一代SiC MOSFET设计和工艺技术研制出6.5 kV、10 kV以及15 kV等高压低导通电阻SiC MOSFET，其中10 kV和15 kV器件的比导通电阻分别为144 mΩ·cm2和204 mΩ·cm2，接近单极型SiC器件的理论极限。

Since the technical progress of SiC power metal oxide semiconductor field effect transistor(MOSFET) were published in 2017, the device structure design were optimized in view of the high specific onresistance (RON,SP). Our research group has improved the key processing technology to reduce the RON,SP of 1 200 V SiC MOSFET from 8 mΩ·cm2 to 4.8 mΩ·cm2. Using the new design methods and fabrication processes, high performance SiC MOSFET for voltage ratings from 6.5 kV up to 15 kV were achieved. The RON,SP is 144 mΩ·cm2 for the 10 kV devices and 204 mΩ·cm2 for the 15 kV devices which is close to the SiC theoretical limit.