近年来InAs/GaSb二类超晶格红外探测器在材料晶体结构生长、器件结构设计与成像应用方面取得了飞速发展。尤其在多色红外探测方面，二类超晶格材料以其具备的带隙可调、暗电流小、量子效率高、材料均匀性高，以及成本低等优越性能，使其逐步成为第三代红外焦平面探测器的优选材料。本文阐述了锑化物窄带隙半导体研究中心的锑化物多色红外探测器研究进展。本团队成功实现了低噪声、高量子效率以及低光学串扰的短/中、短/长、中/长、长/长、中/长/甚长波等多种高性能多色红外探测器研制。

In recent years, Type-Ⅱ InAs/GaSb superlattice infrared detectors have experienced significant developments in material growth quality, device structural designs, and imaging applications. Especially for multi-color infrared detection, type-Ⅱ superlattice has several fundamental properties such as tunable band gap, low dark current, high quantum efficiency, high uniformity, and low cost, that makes it the preferred material for the third-generation infrared detection technology. In this paper, recent advances in antimonide multi-color detectors at the Center for Antimonide Narrow-Bandgap Semiconductors have been reported. Development of a variety of high-performance multi-color infrared detectors with low noise, high quantum efficiency and low optical crosstalk, such as short/mid, short/long, mid/long, long/long, and mid/long/very long multi-color infrared detectors were successfully realized.