研究了InSb红外探测器组件的无输出问题。通过故障分析确定探测器的失效部件为InSb芯片。结合器件结构和工艺，对InSb器件的失效机理进行了研究。发现器件在去胶工艺中有光刻胶残留，在后续的钝化工艺中会生成难以腐蚀去除的沾污层，导致电极膜层存在可靠性隐患。经历高温、振动等环境试验后电极浮起，导致了探测器组件的无输出问题。

The problem of no output of InSb infrared detector module is studied. Through failure analysis, it is determined that the failure component of the detector is the InSb chip. Combined with the device structure and process, the failure mechanism of InSb device is studied. It is found that there is photoresist residue in the device during the degumming process, and a contaminant layer that is difficult to be etched and removed will be generated in the subsequent passivation process, resulting in hidden reliability problems in the electrode film. The electrode floates after environmental tests such as high temperature and vibration, which will cause the problem of no output of the detector assembly.