砷化镓光导开关（GaAs-PCSS）是具有快响应、高重频、低抖动、高功率容量的半导体光电导开关，多通道设计能够有效降低GaAs-PCSS非线性大电流导通时的损伤，提高开关寿命。为探究GaAs-PCSS多通道同步导通的必要条件，在基于固态脉冲形成线的实验平台上，通过特殊设计的夹具，将多枚GaAs-PCSS并联连接以作为脉冲形成电路的开关，以对各GaAs-PCSS施以不同的触发信号进行测试。实验结果证明：相同触发信号下，开关导通电流被成功地均分到4个GaAs-PCSS通道中；不同触发信号下，为获得较好的电流均分效果，各通道触发延迟时差须小于1 ns，触发能量差须小于20 μJ。设计了分体式、单体式两种结构的多通道GaAs-PCSS，其中基于刻蚀工艺的单体式20通道GaAs-PCSS在7 000余次大电流工作后仅发生轻微损伤。

Gallium Arsenide Photoconductive Semiconductor Switch (GaAs-PCSS) has outstanding features, such as, fast response, high repetition, low jitter and high-power capacity. Multi-channel design can effectively reduce the damage from high current in nonlinear mode and improve switch’s lifetime. In this paper, on the solid-state pulse forming line experimental platform, multiple GaAs-PCSSs are connected in parallel as one switch through a special fixture, and different trigger signals are applied to each of them, in order to study the necessary conditions for GaAs-PCSS multi-channel synchronous conduction. The results show that, firstly, by the same trigger signals, the on-current is successfully divided into 4 GaAs-PCSS channels; secondly, by different trigger signals, the delay time difference and trigger energy difference must be lower than 1 ns and 20 μJ respectively, if an effective current diversion is expected; thirdly, split and integrated multi-channel GaAs-PCSS structures are designed, and the integrated 20-channel GaAs-PCSS was slightly damaged after 7 000 shots.