光子学报, 2020, 49 (6): 0604002, 网络出版: 2020-11-26  

基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化 下载: 514次

Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices
作者单位
北京工业大学 光电子技术教育部重点实验室, 北京 100124
摘要
利用GaN高电子迁移率晶体管(HEMT)的栅控特性和锆钛酸铅(PZT)铁电薄膜的光伏效应,在HEMT器件的栅极处沉积一层PZT铁电薄膜,提出了一种新型的(光敏感层/HEMT)探测结构.为制备出光伏性能优异的薄膜,对不同的溅射功率和退火温度制备的PZT铁电薄膜进行表面形貌和铁电性能分析.发现200 W溅射功率、700℃的退火温度制备的薄膜表面晶粒生长明显,剩余极化强度为38.0 μC·cm-2.工艺制备GaN基HEMT器件并把PZT薄膜沉积到器件栅极上.在无光和365 nm紫外光照射下对有、无铁电薄膜的HEMT探测器的输出特性进行测试.结果显示,在光照时,有铁电薄膜的HEMT器件相较于无光时,源-漏饱和电压最多降低3.55 V,饱和电流最多增加5.84 mA,表明新型感光栅极HEMT探测器对紫外光具有优异的探测效果.为实现对新型探测器的结构进行优化的目的,对栅长为1 μm、2 μm和3 μm等不同栅长的探测器进行光照测试.结果表明,在紫外光照射下,三种探测器的漏极饱和电流分别为23 mA、20 mA和17 mA,所以栅长越长器件的饱和电流越小,探测性能越差.
Abstract
Based on the gate controlled characteristics of GaN High Electron Mobility Transistors(HEMTs) and on the photovoltaic effect in lead zirconate-titanate(PZT) ferroelectric thin films, a new type of photosensitive layer/HEMT detector structure is proposed. For this purpose, a PZT ferroelectric thin film is deposited on the gate of a HEMT device to prepare films with optimized photovoltaic performance, the surface morphology and ferroelectric properties of PZT films prepared by different sputtering powers and annealing temperatures are analyzed. It is found that the best conditions for the grain growth on the surface of the film are at 200 W sputtering power and 700℃ annealing temperature, and the residual polarization intensity is 38.0 μC·cm-2.The output characteristics of the fabricated photosensitive gate PZT/GaN-based HEMT devices are compared to those of pristine HEMTs under both dark condition and 365 nm ultraviolet light. The results show that the source drain saturation voltage of the HEMT with the ferroelectric thin film decreases by 3.55 V and the saturation current increases by 5.84 mA, compared with those without light, clearly indicating a significant UV photodetection capability. To achieve the purpose of optimizing the structure of the new type of detector, detectors with different grid lengths such as 1 μm, 2 μm, and 3 μm are tested. The results show that under ultraviolet light, the drain saturation currents of the three detectors are 23 mA, 20 mA, and 17 mA, respectively. Therefore, the longer the gate length, the smaller the saturation current of the device, and the worse the detection performance.

朱彦旭, 朱彦旭, 杨壮, 宋会会, 李赉龙, 杨忠, 李锜轩, 胡铁凡. 基于感光栅极GaN高迁移率晶体管的新型探测器制备与优化[J]. 光子学报, 2020, 49(6): 0604002. Yan-xu ZHU, Yan-xu ZHU, Zhuang YANG, Hui-hui SONG, Lai-long LI, Zhong YANG, Qi-xuan LI, Tie-fan HU. Preparation and Optimization of Photosensitive Gate GaN-based High Electron Mobility Transistor Devices[J]. ACTA PHOTONICA SINICA, 2020, 49(6): 0604002.

引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!