对基于铟镓砷(InGaAs)材料体系的共面波导型光电导开关进行了理论分析,并研究了开关在无光照的暗态和激光照射的亮态情况下射频信号的传输性能。采用工作波长为1550 nm、脉宽为96 fs、重复频率为103.2 MHz的激光脉冲触发开关对445 MHz的射频信号进行采样,结果表明,该高速光电导开关能实现射频信号的带通采样,同时减小了开关的载流子寿命,有利于实现更高频率的信号采样。

Theoretical analysis of the coplanar waveguide photoconductive switch based on InGaAs material system is carried out, and the transmission performance of the radio-frequency (RF) signal in the dark state without illumination and the bright state with laser irradiation is studied. A laser pulse trigger switch with a working wavelength of 1550 nm, a pulse width of 96 fs and a repetition rate of 103.2 MHz is used to sample the 445 MHz RF signal. Experimental results confirm that the high-speed photoconductive switch can realize the bandpass sampling of the RF signal, while reducing the carrier lifetime of the switch, which is conductive to achieving higher frequency signal sampling.