激光与光电子学进展, 2019, 56 (21): 211601, 网络出版: 2019-11-02  

基于Ce∶YAG荧光晶体的高流明密度光源 下载: 622次

High-Lumen-Density Light Source Based on Ce∶YAG Fluorescent Crystal
作者单位
1 中国科学院上海光学精密机械研究所高功率激光单元技术实验室, 上海 201800
2 中国科学院大学材料与光电研究中心, 北京 100049
3 南京光宝光电科技有限公司, 江苏 南京 210038
摘要
大功率LED照明的需求越来越大,但随着蓝光 LED 芯片功率的不断上升,散热和光衰减等问题也愈发显现出来。为探索大功率LED特种照明,基于阵列蓝光LED激发Ce∶YAG荧光晶体,采用创新的结构装置,在小面积端面输出高流明密度的光。研究影响LED出光的因素、不同掺杂浓度(物质的量浓度)晶棒对于蓝光的吸收、大功率LED激发不同Ce离子掺杂浓度晶棒的出光效果、晶棒端面处理情况对于出光的影响等。结果表明,利用氮化铝制成的基板满足大功率LED的散热需求,掺杂浓度为0.8%的晶棒出光光通量更高,对晶棒端面进行处理可大幅提升出光光通量。实验装置可输出6000 lm以上的光通量,流明密度高达1640 lm/mm 2,可应用于中高亮度照明设备中。
Abstract
The demand for high-power light-emitting diode (LED) lighting shows an increasing trend; however, with the increasing power of blue LED chips, problems such as heat dissipation and light attenuation are increasing as well. To explore high-power LED special lighting, an array-based blue LED is used to excite Ce∶YAG fluorescent crystal using an innovative structural device to output high-lumen-density light on small-area end-faces. Many factors affect LED light emission, such as the absorption of blue light by crystal rods with different doping concentrations, the differing light-emitting effects of high-powered LED excitation for crystal rods with different Ce-ion-doping concentrations, and the influence of end-face treatment of crystal rods upon the light output. The result shows that a substrate made by aluminum nitride satisfies the heat-dissipation requirement of a high-powered LED; the use of crystal rod with a doping concentration of 0.8% and the end-face treatment of the crystal rod can greatly increase luminous flux. The experimental device can output more than 6000 lm of light flux with a lumen density up to 1640 lm/mm 2, which can be applied to medium- and high-brightness lighting equipments.

潘富林, 曹顿华, 郭向朝, 李海兵. 基于Ce∶YAG荧光晶体的高流明密度光源[J]. 激光与光电子学进展, 2019, 56(21): 211601. Fulin Pan, Dunhua Cao, Xiangchao Guo, Haibing Li. High-Lumen-Density Light Source Based on Ce∶YAG Fluorescent Crystal[J]. Laser & Optoelectronics Progress, 2019, 56(21): 211601.

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