Photonics Research, 2020, 8 (10): 10001634, Published Online: Sep. 29, 2020
High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration Download: 590次
Abstract
Silicon nitride attracts increasing interest in integrated photonics owing to its low propagation loss and wide transparency window, extending from to 2350 nm. Scalable integration of active devices such as amplifiers and lasers on the platform will enable applications requiring optical gain and a much-needed alternative to hybrid integration, which suffers from high cost and lack of high-volume manufacturability. We demonstrate a high-gain optical amplifier in monolithically integrated on the platform using a double photonic layer approach. The device exhibits a net gain of at 1532 nm, and a broadband gain operation over 70 nm covering wavelengths in the S-, C- and L-bands. This work shows that rare-earth-ion-doped materials and in particular, rare-earth-ion-doped , can provide very high net amplification for the platform, paving the way to the development of different active devices monolithically integrated in this passive platform.
Jinfeng Mu, Meindert Dijkstra, Jeroen Korterik, Herman Offerhaus, Sonia M. García-Blanco. High-gain waveguide amplifiers in Si3N4 technology via double-layer monolithic integration[J]. Photonics Research, 2020, 8(10): 10001634.