Photonics Research, 2020, 8 (10): 10001551, Published Online: Sep. 11, 2020
Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon Download: 733次
Abstract
Heterogeneously integrated lasers in the O-band are a key component in realizing low-power optical interconnects for data centers and high-performance computing. Quantum-dot-based materials have been particularly appealing for light generation due to their ultralow lasing thresholds, small linewidth enhancement factor, and low sensitivity to reflections. Here, we present widely tunable quantum-dot lasers heterogeneously integrated on silicon-on-insulator substrate. The tuning mechanism is based on Vernier dual-ring geometry, and a 47 nm tuning range with 52 dB side-mode suppression ratio is observed. These parameters show an increase to 52 nm and 58 dB, respectively, when an additional wavelength filter in the form of a Mach–Zehnder interferometer is added to the cavity. The Lorentzian linewidth of the lasers is measured as low as 5.3 kHz.
Aditya Malik, Joel Guo, Minh A. Tran, Geza Kurczveil, Di Liang, John E. Bowers. Widely tunable, heterogeneously integrated quantum-dot O-band lasers on silicon[J]. Photonics Research, 2020, 8(10): 10001551.