Chinese Optics Letters, 2020, 18 (7): 071401, Published Online: May. 25, 2020  

25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C Download: 603次

Author Affiliations
1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
2 Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
Abstract
We report 25 Gb/s high-speed directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot (QD) lasers grown by molecular beam epitaxy. The active region of the lasers consists of eight layers of p-doped InAs QDs with high uniformity and density. Ridge-waveguide lasers with a 3-μm-wide and 300-μm-long cavity show a low threshold current of 14.4 mA at 20°C and high temperature stability with a high characteristic temperature of 1208 K between 20°C and 70°C. Dynamic response measurements demonstrate that the laser has a 3 dB bandwidth of 7.7 GHz at 20°C and clearly opened eye diagrams even at high temperatures up to 75°C under a 25 Gb/s direct modulation rate.

Zhongkai Zhang, Zunren Lü, Xiaoguang Yang, Hongyu Chai, Lei Meng, Tao Yang. 25 Gb/s directly modulated ground-state operation of 1.3 μm InAs/GaAs quantum dot lasers up to 75°C[J]. Chinese Optics Letters, 2020, 18(7): 071401.

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