Photonics Research, 2020, 8 (3): 03000352, Published Online: Feb. 21, 2020  

Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform Download: 758次

Author Affiliations
1 Centre for Nanoscience and Nanotechnology (C2N), CNRS, Université Paris-Sud, Université Paris-Saclay, UMR 9001, 91405 Orsay Cedex, France
2 Technologie R&D, STMicroelectronics, SAS, 850 rue Jean Monnet, 38920 Crolles, France
3 III-V lab, a joint venture from Nokia Bell Labs, Thales and CEA, 1 Avenue Augustin Fresnel, 91767 Palaiseau Cedex, France
Abstract
We report supercontinuum generation in nitrogen-rich (N-rich) silicon nitride waveguides fabricated through back-end complementary-metal-oxide-semiconductor (CMOS)-compatible processes on a 300 mm platform. By pumping in the anomalous dispersion regime at a wavelength of 1200 nm, two-octave spanning spectra covering the visible and near-infrared ranges, including the O band, were obtained. Numerical calculations showed that the nonlinear index of N-rich silicon nitride is within the same order of magnitude as that of stoichiometric silicon nitride, despite the lower silicon content. N-rich silicon nitride then appears to be a promising candidate for nonlinear devices compatible with back-end CMOS processes.

Christian Lafforgue, Sylvain Guerber, Joan Manel Ramirez, Guillaume Marcaud, Carlos Alonso-Ramos, Xavier Le Roux, Delphine Marris-Morini, Eric Cassan, Charles Baudot, Frédéric Boeuf, Sébastien Cremer, Stéphane Monfray, Laurent Vivien. Broadband supercontinuum generation in nitrogen-rich silicon nitride waveguides using a 300 mm industrial platform[J]. Photonics Research, 2020, 8(3): 03000352.

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