中国激光, 2020, 47 (1): 0105002, 网络出版: 2020-01-09   

半导体激光器边缘绝热封装改善慢轴光束质量 下载: 1844次

Improving Slow-Axis Laser Beam Quality of Semiconductor Laser with Edge Adiabatic Package
作者单位
1 中国科学院半导体研究所光电子器件国家工程研究中心, 北京 100083
2 中国科学院大学材料科学与光电技术学院, 北京 100049
摘要
为了削弱激光器工作时芯片横向温度不均而导致的热透镜效应对慢轴发散角的影响,提高慢轴的光束质量,引入了边缘绝热封装方式,即在激光器芯片两侧与过渡热沉之间加入空气隙,以降低两侧的传导散热。利用有限元分析软件ANSYS 18.0对该封装结构中激光器芯片的温度进行仿真。结果表明:当工作电流为1.6 A,芯片与热沉的接触宽为200 μm时,慢轴发散角由普通封装时的11.5°减小至8.2°,降幅为28%,光束参数积和光束质量因子也分别降低了28%和24%,热阻增大了6%。边缘绝热封装对器件激射波长、阈值电流、电光转换效率的影响很小。
Abstract
Nonuniform lateral temperature distribution causes the thermal lens effect on the far-field slow-axis divergence angle. To alleviate this effect and improve the slow-axis beam quality, we incorporated a method of adiabatic package by implanting an air gap between the chip and the transition heat sink to reduce the conduction heat dissipation on both sides. Herein, the finite element analysis software ANSYS 18.0 was used to analyze the temperature distribution of chips with the edge adiabatic package. The results show that a chip with contact width 200 μm can reduce the slow-axis divergence angle by approximately 28%, from 11.5° to 8.2°, when the working current is 1.6 A. Likewise, it can reduce the beam parameter product and the beam quality factor by 28% and 24%, respectively. The increase in thermal resistance is 6%. Finally, the implementation of edge adiabatic package has little effect on the lasing wavelength, threshold current, and electro-optical conversion efficiency of the device.

赵碧瑶, 井红旗, 仲莉, 曼玉选, 班雪峰, 刘素平, 马骁宇. 半导体激光器边缘绝热封装改善慢轴光束质量[J]. 中国激光, 2020, 47(1): 0105002. Biyao Zhao, Hongqi Jing, Li Zhong, Yuxuan Man, Xuefeng Ban, Suping Liu, Xiaoyu Ma. Improving Slow-Axis Laser Beam Quality of Semiconductor Laser with Edge Adiabatic Package[J]. Chinese Journal of Lasers, 2020, 47(1): 0105002.

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