中国激光, 2019, 46 (11): 1103002, 网络出版: 2019-11-09
非晶硅银薄膜的飞秒激光辐照研究 下载: 885次
Femtosecond Laser Irradiation on Amorphous Silicon Silver Thin Films
摘要
采用磁控共溅射方法制备非晶硅银(a-Si∶Ag)薄膜,并对其进行飞秒激光辐照;采用扫描电子显微镜、拉曼光谱仪、积分球、半导体性能测试仪等,对辐照前后薄膜的表面形貌、微观结构以及光电性能等进行表征。结果表明:当辐照能量为300 mJ/cm 2时,a-Si∶Ag薄膜表面无明显的刻蚀痕迹,薄膜中有纳米晶硅颗粒生成,薄膜中的Ag纳米晶长大;当辐照能量为600 mJ/cm 2时,薄膜表面出现明显的刻蚀痕迹,Ag纳米晶进一步长大,然而,产生的纳米晶硅颗粒的尺寸却没有变化;被飞秒激光辐照后,a-Si∶Ag薄膜比辐照前的电阻率更小,同时,薄膜对可见-近红外波段的入射光产生了反射减弱现象。研究结果对基于a-Si∶Ag薄膜的忆阻神经突触器件性能的改善具有积极意义。
Abstract
Herein, amorphous silicon silver (a-Si∶Ag) thin films are prepared via magnetron co-sputtering and subjected to femtosecond laser irradiation. The scanning electron microscopy, Raman spectroscopy, integrating sphere, and semiconductor performance tester are used to characterize the surface morphology, microstructure, and photoelectric properties of thin films before and after irradiation. Results show that for an irradiation energy of 300 mJ/cm 2, no obvious etching trace is observed on the surface of the a-Si∶Ag thin film, nanocrystalline Si particles are formed in the thin film, and the size of the Ag nanocrystals in the thin film increases. For an irradiation energy of 600 mJ/cm 2, obvious etching marks appear on the surface of the thin film, and the size of the Ag nanocrystal increases; however, the nanocrystalline Si particles do not change in size. The a-Si∶Ag thin film irradiated by the femtosecond laser has low resistivity, and the irradiated film can diminish a reflection of the incident light in the visible-near-infrared band. The obtained results positively affect the performance of artificial synaptic devices based on a-Si∶Ag thin films.
李东阳, IlyasNasir, 宋宇浩, 袁余涵, 李伟. 非晶硅银薄膜的飞秒激光辐照研究[J]. 中国激光, 2019, 46(11): 1103002. Dongyang Li, Nasir Ilyas, Yuhao Song, Yuhan Yuan, Wei Li. Femtosecond Laser Irradiation on Amorphous Silicon Silver Thin Films[J]. Chinese Journal of Lasers, 2019, 46(11): 1103002.