无机材料学报, 2021, 36 (1): 43, 网络出版: 2021-01-21  

Ti 4+掺杂M型六角铁氧体BaFe12-xTixO19陶瓷的磁学和介电特性

Magnetic and Dielectric Properties of Ti 4+-doped M-type Hexaferrite BaFe12-xTixO19 Ceramics
作者单位
1 华东师范大学 1. 物理与电子科学学院, 电子科学系
2 极化材料与器件教育部重点实验室, 上海 200241
摘要
六角铁氧体由于其具备高温下的低场磁电耦合特性, 有望应用于新型多态存储器及磁电传感器等微电子器件。利用Ti 4+离子对M型六角铁氧体BaFe12O19进行B位掺杂, 不仅可以调控材料的磁结构和磁学特性, 同时, Ti离子在六角铁氧体B位的不等价掺杂还可以产生相关缺陷、载流子和变价Fe离子进而改变其电学特性。本研究采用固相烧结法制备了M型六角铁氧体BaFe12-xTixO19 (x=0, 0.5, 1, 1.5)陶瓷, 并对其进行了性能表征和测试, 研究了B位Ti 4+掺杂对材料结构、磁学和介电特性的影响。研究结果表明, BaFe12-xTixO19呈现上、下自旋反平行的亚铁磁序。当Ti 4+离子掺杂量较低时, 更易取代位于上自旋格子的Fe 3+离子, 其磁化强度随Ti掺杂量的增加而减小; 随着Ti 4+离子掺杂量的进一步增加, 位于下自旋格子的Fe 3+离子也会逐渐被取代, 此时, 饱和磁化强度随掺杂量的增加而增加。此外, Ti 4+离子的引入也会使晶粒内部呈现半导性, 在晶粒/晶界处产生Maxwell-Wagner界面极化, 故而M型六角铁氧体BaFe12-xTixO19陶瓷会出现明显的低频介电增强并伴随着Maxwell-Wagner介电弛豫。
Abstract
Hexaferrite system is expected to be applied in various kinds of multi-state memories, magnetoelectric sensors and other new microelectronic devices, due to its high temperature magnetoelectric coupling effect with low field. Not only the B-site doping of M-type hexaferrite BaFe12O19 with Ti 4+ ion can change its magnetic structure and magnetic properties, but also the defects, multivalent Fe ions, introduced by B-site non-epuivalent Ti doping, could affect its electric properties. In this study, M-type hexaferrite BaFe12-xTixO19 (x=0, 0.5, 1, 1.5) ceramics were prepared by solid phase sintering. The effects of Ti 4+ doping on the structural, magnetic and dielectric properties were studied. The results show that BaFe12-xTixO19 is in ferrimagnetic order with antiparallel spins. When the doping concentration of Ti 4+ ions is low, it tends to replace Fe 3+ ions with up-spin. And the magnetization decreases with the increase of Ti dopant. However, with the further increase of Ti 4+ doping, Fe 3+ ions with down-spin is also replaced, and the saturation magnetization increases with the increase of x. The introduction of Ti 4+ ions can also make the grains to be semiconductor, which results in the Maxwell-Wagner interface polarization behavior at the interfaces between semiconducting grains and grain-boundaries. Hence, M-type hexaferrite BaFe12-xTixO19 ceramics appear obvious low frequency dielectric enhancement accompanied by a Maxwell-Wagner dielectric relaxation.

柏嘉玮, 杨静, 吕桢飞, 唐晓东. Ti 4+掺杂M型六角铁氧体BaFe12-xTixO19陶瓷的磁学和介电特性[J]. 无机材料学报, 2021, 36(1): 43. Jiawei BAI, Jing YANG, Zhenfei LÜ, Xiaodong TANG. Magnetic and Dielectric Properties of Ti 4+-doped M-type Hexaferrite BaFe12-xTixO19 Ceramics [J]. Journal of Inorganic Materials, 2021, 36(1): 43.

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