Opto-Electronic Advances, 2020, 3 (4): 04190025, Published Online: Jun. 1, 2020  

Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates

Author Affiliations
1 Department of Electrical and Computer Engineering, University of Texas at Arlington, Arlington, Texas 76019, United States
2 Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
3 HexaTech, Inc., 991 Aviation Parkway, Suite 800, Morrisville, North Carolina 27560, United States
4 Department of Electrical and Computer Engineering, Michigan State University, East Lansing, Michigan 48824, United States
Abstract
We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells (MQWs) active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy (LP-OMVPE) in a high-temperature reactor. The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source. A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm2. The emission is completely TE polarized and the side mode suppression ratio (SMSR) is measured to be around 14 dB at 450 kW/cm2.

Akhil Raj Kumar Kalapala, Dong Liu, Sang June Cho, Jeongpil Park, Deyin Zhao, John D. Albrecht, Baxter Moody, Zhenqiang Ma, Weidong Zhou. Optically pumped room temperature low threshold deep UV lasers grown on native AlN substrates[J]. Opto-Electronic Advances, 2020, 3(4): 04190025.

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