中国激光, 2019, 46 (10): 1003001, 网络出版: 2019-10-25   

脉冲激光沉积法制备低阻掺镓氧化锌薄膜及其光电性能 下载: 1308次

Preparation of Low-Resistivity GZO Thin Films Using Pulsed Laser Deposition and Investigation of Optoelectronic Properties
作者单位
广西大学资源环境与材料学院, 广西有色金属及特色材料加工重点实验室, 广西 南宁 530004
摘要
采用脉冲激光沉积法在玻璃衬底上沉积掺镓氧化锌(GZO)透明导电薄膜,使用X射线衍射仪、紫外可见分光光度仪、原子力电子显微镜和霍尔测试系统,研究了氧气分压对GZO薄膜晶体结构、微观形貌以及光电性能的影响。结果表明:所有的样品都表现出六方纤锌矿结构,并具有高度的c轴择优取向生长;薄膜表面致密光滑,晶粒尺寸随氧气分压增大而先增大后减小,当氧气分压为0.5 Pa时,薄膜的结晶性最佳;沉积的GZO薄膜在可见光区域表现出高于91.97%的透过率,且禁带宽度在3.492~3.576 eV之间;随着氧气分压增大,载流子浓度与霍尔迁移率先增加后减小,电阻率先减小后增大,当氧气分压为0.5 Pa时,GZO薄膜的电阻率最低,为2.95×10 -4 Ω·cm。
Abstract
Ga-doped ZnO (GZO) transparent conductive thin films are deposited on glass substrates via the pulsed laser deposition method; further, the influence of oxygen pressure on the structure, surface morphology, and photoelectric properties of the GZO thin film is systematically investigated using X-ray diffractometer, ultraviolet-visible spectroscopy, atomic force microscopy, and Hall test system. Results show that all the samples exhibit a hexagonal wurtzite structure with a preferred orientation along the c-axis. Homogeneous, dense, and compact surfaces are obtained for all the GZO films. The crystal size initially increases and then decreases with the increasing oxygen pressure; optimum crystallinity is observed at an oxygen pressure of 0.5 Pa. The prepared GZO films exhibit a transmittance higher than 91.97% in the visible region; the band gap of the GZO film is 3.492-3.576 eV. The carrier density and Hall mobility initially increase and then decrease with the increasing oxygen pressure. The resistivity initially decreases when the oxygen pressure increases. However, with a further increase in the oxygen pressure, the resistivity increases. The minimum resistivity of 2.95×10 -4 Ω·cm is observed when the oxygen pressure is 0.5 Pa.

莫观孔, 刘家辉, 邹卓良, 唐子媚, 刘宇伦, 何欢, 符跃春, 沈晓明. 脉冲激光沉积法制备低阻掺镓氧化锌薄膜及其光电性能[J]. 中国激光, 2019, 46(10): 1003001. Guankong Mo, Jiahui Liu, Zhuoliang Zou, Zimei Tang, Yulun Liu, Huan He, Yuechun Fu, Xiaoming Shen. Preparation of Low-Resistivity GZO Thin Films Using Pulsed Laser Deposition and Investigation of Optoelectronic Properties[J]. Chinese Journal of Lasers, 2019, 46(10): 1003001.

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