激光与光电子学进展, 2020, 57 (11): 111430, 网络出版: 2020-06-02  

飞秒激光过饱和掺杂硅基光电探测器研究进展 下载: 1559次特邀综述

Research Progress on Hyperdoped Silicon Photodetectors Fabricated by Femtosecond Laser
作者单位
南开大学弱光非线性光子学教育部重点实验室, 物理科学学院&泰达应用物理研究院, 天津 300071
摘要
基于过饱和掺杂硅材料制备的光电探测器表现出低电压高增益、可见光到近红外波段宽光谱响应等优点,主要介绍了飞秒激光过饱和掺杂的作用机制,以及相应硅基光电探测器的国内外研究进展,具体讨论了如何提升器件响应、抑制暗电流、改善材料晶格质量、提升载流子输运能力等问题,介绍了器件在柔性光电子领域的应用拓展,并展望了飞秒激光过饱和掺杂硅基光电探测器的发展前景。
Abstract
The photodetectors based on hyperdoped silicon exhibit advantages including high gain at low voltage, and broadband spectral response ranging from visible to near-infrared wavelengths. In this review, the mechanism of femtosecond laser hyperdoping is introduced, followed by the research progress on hyperdoped silicon photodetectors, especially the discussions on how to enhance device response, suppress dark current, improve lattice quality, and increase carrier mobility. Moreover, photodetectors are introduced for flexible optoelectronic applications. At last, the development prospects of photodetectors based on femtosecond laser hyperdoped silicon are forecasted.

进晓荣, 吴强, 黄松, 贾子熙, 宋冠廷, 周旭, 姚江宏, 许京军. 飞秒激光过饱和掺杂硅基光电探测器研究进展[J]. 激光与光电子学进展, 2020, 57(11): 111430. Xiaorong Jin, Qiang Wu, Song Huang, Zixi Jia, Guanting Song, Xu Zhou, Jianghong Yao, Jingjun Xu. Research Progress on Hyperdoped Silicon Photodetectors Fabricated by Femtosecond Laser[J]. Laser & Optoelectronics Progress, 2020, 57(11): 111430.

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