通过旋涂透明源极并在其上采用喷墨打印的方式制备有源层及源漏电极，从而得到一种垂直结构光晶体管，并获得了较好的光电性能，其响应率为~1 500 A/W，探测率可达1.6×10¹⁴ Jones.向有源层中掺杂一定比例的电子捕获材料PCBM，使有源层中光生空穴复合减小，光生电流增大，从而进一步提高其光探测性能.研究发现当掺杂5wt%电子捕获材料时，垂直结构光晶体管性能达到最优，响应率为~6 000 A/W，探测率可达1.4×10¹⁵ Jones.

The source electrode and drain electrode are prepared with inkjet printed active layer on the spin-coated transparent source electrode, obtaining a vertical phototransistor with high photoresponsivity of ~1 500 A/W and high detectivity of ~1.6×10¹⁴ Jones. By doping electron capture materials PCBM into the active layer, the recombination of photo-generated holes in the active layer decreases and the photo-generated current increases. Thus the photodetector performance is improved further. It is found that when the electron capture material doping is 5wt%, the performance of phototransistor is better. The photoresponsivity is boosted to about 6 000 A/W and the detectivity is up to 1.4×10¹⁵ Jones.