利用CFBR-Ⅱ快中子反应堆（中国第二座快中子脉冲堆）和⁶⁰Co装置开展不同顺序的中子/γ辐照双极晶体管的实验。在集电极-发射极电压恒定条件下，测量了双极晶体管电流增益随集电极电流的变化曲线，研究不同顺序中子/γ辐照对双极晶体管电流增益的影响。分析实验结果发现，集电极-发射极电压一定时，集电极电流极低情况下电流增益退化比较大，随集电极电流增加电流增益逐渐减小；就实验选中的两类晶体管而言，先中子后γ辐照造成双极晶体管电流增益的退化程度大于先γ后中子辐照，而且PNP型晶体管比NPN型晶体管差异更明显。本文进行了双极晶体管电离/位移协同辐照效应相关机理的初步探讨。

In this paper, CFBR-II fast neutron reactor (China''s second fast neutron pulse reactor) and Co-60 device are used to carry out experiments on different sequential neutrons/gamma irradiated bipolar transistors. Under the condition that the collector-emitter voltage is constant, the variation curve of the bipolar transistor current gain with the collector current is measured, and the influence of different irradiation order of neutron/ gamma on the current gain of the bipolar transistor is studied. The experimental results show that when the collector-emitter voltage is constant and the collector current is extremely low, the current gain degradation of the bipolar transistor is relatively large, and the current gain increases with the collector current. The degradation of the current gain of the bipolar transistor caused by the gamma irradiation after the neutron pre-irradiation would be greater than that of the neutron irradiation after the gamma pre-irradiation, and the difference is more obvious in PNP transistor than in NPN transistor. This paper presents a preliminary discussion on the related mechanism.