表面等离激元诱导热电子光电转换是近年来的研究热点,在光电探测、太阳能电池、光催化反应等方面有着广阔的应用前景。表面等离激元热电子的快速转移和收集可以有效避免弛豫、复合、束缚等过程所引起的能量损失,提高器件的光电转换效率和速度。此外,利用等离激元热电子转移可以打破光电探测波段受限于半导体带隙的瓶颈,为红外光电探测提供有效手段。除贵金属外,重掺杂半导体材料由于可调控的红外表面等离激元共振特性也逐渐引起了人们的广泛关注。介绍了表面等离激元热电子的激发、转移机制及表面等离激元热电子红外光电探测等方面的研究进展,并讨论了该领域存在的问题及挑战,为设计高性能表面等离激元热电子光电转换器件提供了参考。

Photoelectric conversion of surface plasmon-induced hot electrons has recently attracted considerable attention as it shows great potential in applications such as highly efficient photodetection, solar cells, and catalytic reactions. The quick transfer and collection of plasmon-induced hot electrons can effectively avoid energy loss caused by relaxation, recombination, and trapping, thereby improving the efficiency and speed of photoelectric conversion. More importantly, plasmon-induced hot electron transfer contributes towards a photoresponse that is beyond the bandgap limit of semiconductors, providing an effective approach for infrared photodetection. In addition to noble metals, heavily doped semiconductors have attracted significant attention owing to their tunable localized surface plasmon resonance in the infrared region of the electromagnetic spectrum. This review focuses on the fundamental mechanism of the excitation and transfer of plasmon-induced hot electrons and the research progress of infrared photodetection based on hot-electron transfer. Furthermore, the current problems and challenges in this field are discussed in order to provide guidance for the design of high-performance devices based on plasmon-induced hot-electron transfer.