在微波输能窗次级电子倍增效应的模拟研究中，往往忽视低能电子的作用。基于Monte Carlo算法，模拟输能窗次级电子倍增规律，研究了经典的Vaughan模型、Vincent模型和Rice模型三种二次电子发射模型下次级电子倍增效应的差异，通过拟合倍增敏感曲线，获得了低能电子对切向和法向电场作用下输能窗次级电子倍增效应的影响。模拟结果表明，当切向电场作用时，三个发射模型得到的敏感曲线几乎重合，低能电子对敏感曲线的影响甚微，其中Rice模型的敏感区域最大。当法向电场作用时，由Vincent模型拟合得到的敏感区域远大于其他两个模型。

In the multipactor investigation of dielectric window, the effect of low energy electron is usually neglected. In this paper, a homemade Monte Carlo model was developed to simulate the multipactor mechanism of the RF window. By comparing the multipactor susceptibility curves obtained under the classical Vaughan secondary electron emission model and two modified Vaughan models (fitted by Rice and Vincent respectively), the influence of low-energy electrons on the multipactor effect of the dielectric window was obtained. The simulation results demonstrate that under effect of the tangential electric field, the susceptibility curves obtained by the three emission models almost overlap. Low-energy electrons have little effect on the susceptibility curves, and the Rice model has the largest discharge region. In comparison, under effect of the normal electric field, the susceptibility area fitted by the Vincent model is much larger than the other two models. These characteristics should be taken into account in the research on the breakdown phenomenon of high-power dielectric window and breakdown suppression technology.