Photonics Research, 2020, 8 (6): 06001049, Published Online: Jun. 1, 2020
Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height Download: 770次
Abstract
The effect of tin-oxide (SnO) nanoparticles, which are obtained by indium-tin-oxide (ITO) treatment, on the p-GaN surface of GaN-based flip-chip blue micro-light-emitting diode ( -LED) arrays is investigated. A thin Ag layer is deposited on the ITO-treated p-GaN surface by sputtering. SnO nanoparticles originate from inhomogeneous Schottky barrier heights (SBHs) at Ag/p-GaN contact. Therefore, effective SBH is reduced, which causes carrier transport into the -LED to enhance. 10 nm thick ITO-treated -LEDs show better optoelectronic characteristics among fabricated -LEDs owing to improved ohmic contact and highly reflective p-type reflectors. Basically, SnO nanoparticles help to make good ohmic contact, which results in improved carrier transport into -LEDs and thus results in increased optoelectronic performances.
Jae Hyeok Lee, Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Yu-Jung Cha, Joon Seop Kwak. Impact of tin-oxide nanoparticles on improving the carrier transport in the Ag/p-GaN interface of InGaN/GaN micro-light-emitting diodes by originating inhomogeneous Schottky barrier height[J]. Photonics Research, 2020, 8(6): 06001049.