Photonics Research, 2020, 8 (5): 05000630, Published Online: Apr. 15, 2020
Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist Download: 1181次
Abstract
Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were demonstrated. The semipolar (20-21) InGaN/GaN μ-LEDs were fabricated on large (4 in.) patterned sapphire substrates by orientation-controlled epitaxy. The semipolar μ-LEDs showed a 3.2 nm peak wavelength shift and a 14.7% efficiency droop under injected current density, indicating significant amelioration of the quantum-confined Stark effect. Because of the semipolar μ-LEDs’ emission-wavelength stability, the RGB pixel showed little color shift with current density and achieved a wide color gamut (114.4% NTSC space and 85.4% Rec. 2020).
Sung-Wen Huang Chen, Yu-Ming Huang, Konthoujam James Singh, Yu-Chien Hsu, Fang-Jyun Liou, Jie Song, Joowon Choi, Po-Tsung Lee, Chien-Chung Lin, Zhong Chen, Jung Han, Tingzhu Wu, Hao-Chung Kuo. Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist[J]. Photonics Research, 2020, 8(5): 05000630.