在YSZ（100）衬底上，采用脉冲激光沉积法在500 ℃至700 ℃的不同沉积温度下生长出尖晶石结构的Mn_1.56Co_0.96Ni_0.48O₄（MCNO）薄膜.由于沉积温度是制备高质量薄膜的重要因素，因此本文研究了MCNO薄膜结构、电学和磁学性能随沉积温度的变化.通过对X射线衍射图和原子力显微镜图像的分析，发现MCNO薄膜的结晶与沉积温度有很大关系.随着沉积温度的升高，MCNO薄膜的电阻率呈V型变化，其导电过程可以用小极化子跳跃机理来描述.同时，随温度变化的磁化曲线表明所有样品都显示出从铁磁性到顺磁性的转变，且沉积温度为600 ℃的MCNO薄膜具有216 K的高居里温度.以上研究结果表明，在600 ℃沉积的MCNO薄膜具有适用于热敏电阻器件和多功能异质结所需的良好性能.

Mn_1.56Co_0.96Ni_0.48O₄ （MCNO） thin films with spinel structure were grown on YSZ （100） substrates at different deposition temperatures from 500 ℃ to 700 ℃ by pulsed laser deposition. Since the deposition temperature is an important factor in fabricating high-quality films， the structural， electrical and magnetic properties of MCNO thin films as a function of deposition temperature are investigated. By analyzing the X-ray diffraction patterns and the atomic force microscopy images， it is discovered that the crystallization of MCNO films is highly dependent on the deposition temperature. With the increasing deposition temperature， the resistivity of MCNO thin films is a change of V-type， and the electrical conduction of the MCNO films is controlled by a small polaron hopping mechanism. Meanwhile， the temperature-dependent magnetization curve reveals that all the samples show ferromagnetism to paramagnetism transition and the MCNO film deposited at 600 ℃ has a high Curie temperature of 216 K. All the results above demonstrate that MCNO film deposited at 600 ℃ has satisfactory performance， which is desirable for applications of thermistor devices and multifunctional heterojunctions.