为获得包含布拉格反射器的太阳电池在电子辐照下的退化规律与机制,利用光学膜系软件Macleod设计出适用于晶格失配的GaInP/Ga(In)As/Ge三结太阳电池的布拉格反射器结构,并对嵌入该结构的三结太阳电池开展1 MeV的高能电子辐照实验,最后结合数值拟合方法对电池电学性能的退化进行了详细分析。结果表明:在布拉格反射器结构区域,最高反射率的理论值与实验值基本相符;随着辐照注量增大,三结电池各项电学参数的退化越发严重,短路电流退化率大于开路电压,三结电池在长波方向的外量子效率(EQE)退化逐渐严重,并且子电池Ge短路电流的退化率大于其他子电池;在相同的辐照条件下,随着辐照注量增大,布拉格反射器结构带宽区域的最高反射率逐渐衰减,但在辐照注量低于2×1 015e/cm ²时仍能提升短路电流,说明布拉格反射器结构对抗辐照具有积极作用。

To obtain the degradation ruler and mechanism of the solar cell containing distributed Bragg reflectors (DBR) at electron irradiation, Macleod software was used to design suitable DBR for upright metamorphic GaInP/Ga(In)As/Ge triple-junction solar cell, and 1 MeV electron irradiation experiment was carried out on the solar cell. Al last, the electrical properties degradation was analyzed by the method of mathematically fitting. The results show that the theoretical highest reflectance is basically consistent with the experimental value. With the increase of irradiation fluence, the electrical parameters deteriorate is seriously and the degradation rate of short-circuit current is larger than that of open-circuit voltage, the external quantum efficiency degradation of the solar cell in long wavelength is gradually serious, and the degradation rate of short-circuit current in the Ge sub-cell is larger than that of other sub-cells. With the increase of irradiation influnce,the maximum reflectance of the DBR gradually degrades in bandwidth area under the same irradiation condition, but the short-circuit current can still be improved when the irradiation fluence is less than 2×10 ¹⁵ e/cm ², showing that the DBR has positive effects on anti-irradiation.