通过单片集成的方法,将工作于太赫兹频段(430 GHz)的三倍频器的各个功能电路集成在厚度为12 μm的砷化镓薄膜单片上,设计、制造太赫兹三倍频集成电路单片。单片结构采用一对反向并联连接的肖特基二极管,构成串联平衡式电路,电路不需要外加偏置电压。平衡式电路只产生奇数次谐波,简化了电路分析和优化过程。电路设计采用三维电磁仿真软件与谐波非线性仿真软件联合仿真场路的方法,准确模拟单片电路的射频特性。将单片电路安装在中间剖开的波导腔体内制成三倍频器进行测试,在430 GHz处测得输出功率为215.7 μW,效率为4.3%。

A 430 GHz tripler circuit in the terahertz range, which consists of all parts of a tripler, has been designed and fabricated on a 12 μm thick GaAs film substrate. A pair of two matched anti-parallel Schottky diodes without application of direct current bias is used to realize series balanced tripler structure. One distinct advantage of the balanced configuration is that it generates only odd harmonics, which simplifies the tripler analysis and optimization. Harmonic nonlinear simulations and three-dimensional electromagnetic simulations are combined to simulate radio-frequency performance of the entire tripler circuit accurately. The monolithically integrated 430 GHz tripler circuit is mounted in a split waveguide block for test. It has produced a peak output power of 215.7 μW with 4.3% efficiency at 430 GHz.