Photonics Research, 2019, 7 (8): 08000B48, Published Online: Jul. 12, 2019  

Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection Download: 921次

Author Affiliations
1 School of Electronic Science and Engineering, Nanjing University, Nanjing 210023, China
2 e-mail: wz.xu@nju.edu.cn
3 e-mail: hailu@nju.edu.cn
Abstract
In this work, a GaN p-i-n diode based on Mg ion implantation for visible-blind UV detection is demonstrated. With an optimized implantation and annealing process, a p-GaN layer and corresponding GaN p-i-n photodiode are achieved via Mg implantation. As revealed in the UV detection characterizations, these diodes exhibit a sharp wavelength cutoff at 365 nm, high UV/visible rejection ratio of 1.2×104, and high photoresponsivity of 0.35 A/W, and are proved to be comparable with commercially available GaN p-n photodiodes. Additionally, a localized states-related gain mechanism is systematically investigated, and a relevant physics model of electric-field-assisted photocarrier hopping is proposed. The demonstrated Mg ion-implantation-based approach is believed to be an applicable and CMOS-process-compatible technology for GaN-based p-i-n photodiodes.

Weizong Xu, Yating Shi, Fangfang Ren, Dong Zhou, Linlin Su, Qing Liu, Liang Cheng, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu. Magnesium ion-implantation-based gallium nitride p-i-n photodiode for visible-blind ultraviolet detection[J]. Photonics Research, 2019, 7(8): 08000B48.

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