中国激光, 2005, 32 (8): 1031, 网络出版: 2006-06-01
刻蚀端面AlGaInAs/AlInAs激光器的制作与特性
Etched-Facet AlGaInAs/AlInAs Semiconductor Laser Fabricated by Cl2/BCl3/CH4 Inductively Coupled Plasma
激光技术 刻蚀端面激光器 感应耦合等离子体 laser technique etched-facet laser AlGaInAs AlGaInAs Cl2/BCl3/CH4 Cl2/BCl3/CH4 inductively coupled plasma
摘要
利用Cl2/BCl3/CH4电感应耦合等离子体(ICP)干法刻蚀技术,实现了对AlGaInAs,InP材料的非选择性刻蚀。AlGaInAs与InP的刻蚀速率分别为820 nm/min与770 nm/min,获得了刻蚀深度为4.9 μm,垂直光滑的AlGaInAs/AlInAs激光器的刻蚀端面。在此基础上制作出宽接触的刻蚀端面AlGaInAs/AlInAs激光器,实现了室温脉冲激射,其阈值电流和微分量子效率与传统的解理端面激光器基本相当。并通过刻蚀端面与解理端面激光器特性的比较(包括电流-电压、电流-输出光功率以及远场特性),分析了刻蚀端面的引入对激光器特性的影响。
Abstract
Nonselective dry etching of the facet of AlGaInAs/AlInAs laser has been demonstrated by using Cl2/BCl3/CH4 inductively coupled plasma (ICP). The etching rates of AlGaInAs and InP material were 820 and 770 nm/min. Vertical and smooth etched facet of AlGaInAs/AlInAs laser with 4.9 μm-deep has been achieved. Board-area etched-facet AlGaInAs/AlInAs semiconductor lasers have been fabricated with threshold current and slope-efficiency almost equal to that of cleaved-facet lasers. The effects of etched-facet on semiconductor laser have been analyzed by comparison the V-I, P-I characteristics and far field distribution between etched-facet and traditional cleaved-facet semiconductor laser.
王健, 熊兵, 孙长征, 郝智彪, 罗毅. 刻蚀端面AlGaInAs/AlInAs激光器的制作与特性[J]. 中国激光, 2005, 32(8): 1031. 王健, 熊兵, 孙长征, 郝智彪, 罗毅. Etched-Facet AlGaInAs/AlInAs Semiconductor Laser Fabricated by Cl2/BCl3/CH4 Inductively Coupled Plasma[J]. Chinese Journal of Lasers, 2005, 32(8): 1031.