光学学报, 2014, 34 (10): 1031001, 网络出版: 2014-09-09   

钽掺杂氧化钨薄膜电致变色性能

Electrochromic Properties of Ta Doped Tungsten Oxide Thin Films
作者单位
1 南昌大学材料科学与工程学院, 江西 南昌 330031
2 中国科学院宁波材料技术与工程研究所, 浙江 宁波 315201
摘要
为改善氧化钨电致变色薄膜的电化学循环稳定性,采用磁控溅射方法制备了钽掺杂的氧化钨电致变色薄膜。采用X射线衍射仪(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)、光谱椭偏仪(SE)、紫外可见分光光度计、电化学工作站对薄膜的微观结构、光谱调制能力、着色效率、循环稳定性进行了表征和分析,研究了钽掺杂对氧化钨薄膜结构及电致变色性能的影响。结果表明,适量掺杂可以调节薄膜的微观结构,使薄膜中的裂纹减少,表面更为均匀;但当掺杂过度时,薄膜太过致密,甚至出现表面颗粒团聚凸起的现象,影响了薄膜的多孔性和均匀性,阻碍了离子在薄膜中的迁移和扩散;相对于未掺杂的氧化钨薄膜,适量钽掺杂的薄膜具有更宽的光谱调制范围和更高的着色效率,亦表现出良好的循环稳定性。
Abstract
In order to improve the electrochemical cycling stability of electrochromic tungsten oxide (WO3) thin films, Ta-doping WO3 films are prepared by magnetron sputtering method. Microstructure, optical and electrochromic properties of the films are investigated by X-ray diffraction (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), spectra ellipsmetry (SE), ultraviolet-visible spectrophotometer and cyclic voltammetry, respectively. The influence of Ta-doping on the structure of WO3 thin film and electro-chromism is studied. The results indicate that incorporation of proper content of Ta in WO3 can control the microstructure of the film, which decreases the crack and makes the film smooth. However, excessive Ta can make film dense, or even form agglomerates, which can adversely affect ion transport in the films. Compared to pure WO3 film, the optical modulation, color efficiency and cyclic stability of the Ta-doping WO3 film are improved.
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孙喜莲, 方燕群, 曹洪涛. 钽掺杂氧化钨薄膜电致变色性能[J]. 光学学报, 2014, 34(10): 1031001. Sun Xilian, Fang Yanqun, Cao Hongtao. Electrochromic Properties of Ta Doped Tungsten Oxide Thin Films[J]. Acta Optica Sinica, 2014, 34(10): 1031001.

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