The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar cells

LIU Yang; LIU Wei; CHEN Meng-xin; SHI Si-han; HE Zhi-chao; GONG Jin-long; WANG Tuo; ZHOU Zhi-qiang; LIU Fang-fang; SUN Yun; XU Shu

doi:doi:10.1007/s11801-018-8036-7

光电子快报（英文版）, 2018, 14 (5): 363, Published Online: Apr. 16, 2019

The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se₂ solar cells

论文大纲

LIU Yang ¹LIU Wei ^1,*CHEN Meng-xin ²SHI Si-han ¹HE Zhi-chao ¹GONG Jin-long ²WANG Tuo ²ZHOU Zhi-qiang ¹LIU Fang-fang ¹SUN Yun ¹XU Shu ³

Author Affiliations

¹ Tianjin Key Laboratory of Thin Film Devices and Technology, Institute of Photoelectronic Thin Film Devices and Technology, Nankai University, Tianjin 300071, China

² Key Laboratory for Green Chemical Technology of Ministry of Education, Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), School of Chemical Engineering and Technology, Tianjin University, Tianjin 300072, China

³ Davidson School of Chemical Engineering, Purdue University, West Lafayette IN47907, USA

Abstract

With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is se-vere, which both can result in the decrease of open-circuit voltage and fill factor. In this paper, we prepare Al2O3 by atomic layer deposition (ALD), and investigate the effect of its thickness on the performance of Cu(In,Ga)Se2 (CIGS) solar cell. The device recombination activation energy (EA) is increased from 1.04 eV to 1.11 eV when the thickness of Al2O3 is varied from 0 nm to 1 nm, and the height of back barrier is decreased from 48.54 meV to 38.05 meV. An effi-ciency of 11.57 % is achieved with 0.88-μm-thick CIGS absorber layer.

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LIU Yang, LIU Wei, CHEN Meng-xin, SHI Si-han, HE Zhi-chao, GONG Jin-long, WANG Tuo, ZHOU Zhi-qiang, LIU Fang-fang, SUN Yun, XU Shu. The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se₂ solar cells[J]. 光电子快报（英文版）, 2018, 14(5): 363.

The impact of Al₂O₃ back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se₂ solar cells

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