Chinese Journal of Lasers B, 2002, 11 (1): 39, 网络出版: 2006-08-08  

Photoinduced Phenomena in Amorphous Ge-As-S System

Photoinduced Phenomena in Amorphous Ge-As-S System
作者单位
Shanghai Institute of Optics and Fine Mechanics,The Chinese Academy of Sciences, Shanghai 201800, China
摘要
Abstract
X-ray diffraction and reflectivity as well as transmittance on Ge-As-S bulk and thin films were performed. It was observed photodarkening in Ge-As-S thin films with band gap light illumination from an argon laser of 514.5 nm wavelength and shifting the optical transmittance edge to shorter wavelength, the magnitude of which increases with the increase of the intensity of illumination light. In the Ge-As-S bulk, however, it was not observed photodarkening. Photodarkening in Ge-As-S system was discussed.
参考文献

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LIU Qiming, GU Donghong, HUANG Mingju, GAN Fuxi. Photoinduced Phenomena in Amorphous Ge-As-S System[J]. Chinese Journal of Lasers B, 2002, 11(1): 39. LIU Qiming, GU Donghong, HUANG Mingju, GAN Fuxi. Photoinduced Phenomena in Amorphous Ge-As-S System[J]. 中国激光(英文版), 2002, 11(1): 39.

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