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The electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices

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摘要

The electronic and optical properties of the ZrS2/SnS2 van der Waals heterostructure have been investigated. We find out the formed heterostructure has an intrinsic type-I band alignment. Moreover, the characteristics of optical absorption in heterostructure can be enhanced to the amount of 10^6 in ultraviolet light region. In addition, the tuning electronic properties of ZrS2/SnS2 heterostructure are very interesting, due to the transitions from type-I to type-II band alignment can be occurred by applying an external electric field. These results suggest that the atomically thin materials ZrS2/SnS2 heterostructure will be utilized for the flexible optoelectronic applications.

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作者单位:

    Institute of Semiconductors, Chinese Academy of Sciences

引用该论文

Shang Jimin,Zhang Shuai,Wang Yongqiang,Wen Hongyu,Wei Zhongming. The electronic and optical properties of an intrinsic type-I band alignment ZrS2/SnS2 van der Waals heterostructure for optoelectronic devices[J].Chinese Optics Letters,2019,17(2):02.