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Soliton mode-locked fiber laser with high-quality MBE-grown Bi2Se3 film

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摘要

In this work, a soliton mode-locked erbium-doped fiber laser (EDFL) with a high-quality molecular beam epitaxy (MBE) grown topological insulator (TI) Bi2Se3 saturable absorber (SA) is reported. To fabricate the SA device, a 16-layer Bi2Se3 film was grown successfully on a 100 μm thick SiO2 substrate and sandwiched directly between two fiber ferrules. The TI-SA had a saturable absorption of 1.12 % and a saturable influence of 160 MW/cm2. After inserting the TI-SA into the unidirectional ring-cavity EDFL, self-starting mode-locked soliton pulse trains were obtained at a fundamental repetition rate of 19.352 MHz. The output central wavelength/pulse energy/pulse duration/signal to noise ratio (SNR) of radio frequency spectrum were 1530 nm/18.5 pJ/1.08 ps/60 dBm, respectively. These results demonstrate that MBE technique could provide a controllable and repeatable method for the fabrication of identical high-quality TI-SAs, which is critical important for ultrafast pulse generation.

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作者单位:

    National University of Defense Technology
    National University of Defense Technology
    Academy of Military Sciences PLA China
    National University of Defense Technology
    Academy of Military Sciences PLA China
    Academy of Military Sciences PLA China
    长沙 国防科技大学光电科学与工程学院

引用该论文

Miao Runlin,Tong Mingyu,Yin Ke,Ouyang Hao,Wang Zhenyu,Zheng Xin,Cheng Xiangai,Jiang Tian. Soliton mode-locked fiber laser with high-quality MBE-grown Bi2Se3 film[J].Chinese Optics Letters,2019,17(7):07.