Chinese Optics Letters, 2019, 17 (9): 090401, Published Online: Jul. 24, 2019
High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area Download: 885次
040.1345 Avalanche photodiodes (APDs) 040.7190 Ultraviolet 040.6070 Solid state detectors 230.5160 Photodetectors
Abstract
Ultraviolet (UV) detectors with large photosensitive areas are more advantageous in low-level UV detection applications. In this Letter, high-performance 4H-SiC p-i-n avalanche photodiodes (APDs) with large active area (800 μm diameter) are reported. With the optimized epitaxial structure and device fabrication process, a high multiplication gain of 1.4 × 106 is obtained for the devices at room temperature, and the dark current is as low as ~10 pA at low reverse voltages. In addition, record external quantum efficiency of 85.5% at 274 nm is achieved, which is the highest value for the reported SiC APDs. Furthermore, the rejection ratio of UV to visible light reaches about 104. The excellent performance of our devices indicates a tremendous improvement for large-area SiC APD-based UV detectors. Finally, the UV imaging performance of our fabricated 4H-SiC p-i-n APDs is also demonstrated for system-level applications.
Xingye Zhou, Xin Tan, Yuangang Wang, Xubo Song, Tingting Han, Jia Li, Weili Lu, Guodong Gu, Shixiong Liang, Yuanjie Lü, Zhihong Feng. High-performance 4H-SiC p-i-n ultraviolet avalanche photodiodes with large active area[J]. Chinese Optics Letters, 2019, 17(9): 090401.