The impulse response for a phase-change material Ge₂Sb₂Te₅ (GST)-based photodetector integrated with a silicon-on-insulator (SOI) waveguide is simulated using finite difference time domain method. The current is calculated by solving the drift-diffusion model for short pulse (～10 fs) excitation for both of the stable phases. Full width at half-maximum values of less than 1 ps are found in the investigation. The crystalline GST has higher 3 dB bandwidth than the amorphous GST at a 1550 nm wavelength with responsivities of 21 A/W and 18.5 A/W, respectively, for a 150 nm thick GST layer biased at 2 V. A broad spectrum can be utilized by tuning the device using the phase-change property of material in the near infrared region.