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High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser [Early Posting]

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摘要

End-pumped by a 976 nm diode laser, a high-repetition-rate Er:Yb:YAl3(BO3)4 microchip laser passively Q-switched by a Co2+:MgAl2O4 crystal is reported. At a quasi-continuous-wave pump power of 20 W, a 1553 nm passively Q-switched laser with repetition rate of 544 kHz, pulse duration of 8.3 ns and pulse energy of 3.9 µJ was obtained. To our knowledge, the 544 kHz is the highest reported value for the 1.5 µm passively Q-switched pulse laser. In the continuous-wave pumping experiment, the maximum repetition rate of 144 kHz with pulse duration of 8.0 ns and pulse energy of 1.7 µJ was obtained at the incident pump power of 6.3 W.

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作者单位:

    Fuzhou University
    Chinese Academy of Sciences
    Shanghai Institute of Ceramics Chinese Academy of Sciences
    Chinese Academy of Sciences
    Chinese Academy of Sciences
    Chinese Academy of Sciences

引用该论文

Zha Songqing,Chen Yujin,Li Bingxuan,Lin Yanfu,Liao Wenbin,Zou Yuqi,Huang Chenhui,Lin Zhanglang,Zhang Ge. High-repetition-rate 1.5 µm passively Q-switched Er:Yb:YAl3(BO3)4 microchip laser[J].Chinese Optics Letters,2021,19(7):07.