Chinese Optics Letters, 2021, 19 (11): 114001, Published Online: Aug. 26, 2021  

Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process

Author Affiliations
Institute of Photoelectronic Thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology of Tianjin, Engineering Research Center of Thin Film Photoelectronic Technology, Ministry of Education, Tianjin 300350, China
Abstract
Chalcopyrite Cu(In,Ga)Se2 (CIGS) thin films deposited in a low-temperature process (450°C) usually produce fine grains and poor crystallinity. Herein, different Ag treatment processes, which can decrease the melting temperature and enlarge band gap of the CIGS films, were employed to enhance the quality of thin films in a low-temperature deposition process. It is demonstrated that both the Ag precursor and Ag surface treatment process can heighten the crystallinity of CIGS films and the device efficiency. The former is more obvious than the latter. Furthermore, the Urbach energy is also reduced with Ag doping. This work aims to provide a feasible Ag-doping process for the high-quality CIGS films in a low-temperature process.

Zhaojing Hu, Yunxiang Zhang, Shuping Lin, Shiqing Cheng, Zhichao He, Chaojie Wang, Zhiqiang Zhou, Fangfang Liu, Yun Sun, Wei Liu. Incorporation of Ag into Cu(In,Ga)Se2 films in low-temperature process[J]. Chinese Optics Letters, 2021, 19(11): 114001.

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