针对1064 nm长脉冲激光辐照硅雪崩光电二极管(Si-APD)过程中所引起的温升变化规律进行了理论与实验研究。在考虑Si-APD多层结构的前提下,建立了二维轴对称热传导模型,据此进行了不同条件下的模拟仿真研究,并开展了长脉冲激光辐照Si-APD的温升实验研究。模拟仿真结果与实验结果相一致,均表明长脉冲激光与Si-APD相互作用引起的温升是由入射激光的能量密度和脉冲宽度共同决定的。

The change of temperature rise caused by 1064 nm long-pulse laser irradiation on Si avalanche photodiode (Si-APD) is studied theoretically and experimentally. Considering the Si-APD multilayer structure, we establish a two-dimensional axisymmetric heat conduction model, and simulations under different conditions are carried out. We carry out the experimental study on temperature rise of Si-APD irradiated by long-pulse laser. The simulation results are consistent with the experimental results, which shows that the temperature rise caused by the interaction between long-pulse laser and Si-APD is determined by the energy density and pulse width of incident laser.