通过高频率分辨率的光矢量网络分析法测试氮化硅微环的相位特性可以实现对延时量的间接测试。但测试系统中的相位噪声、激光载波频率波动、信噪比等因素会影响氮化硅微环芯片延时谱的测量稳定度。实验分析这些因素对氮化硅微环延时谱测量的影响,并通过测试系统优化和数据处理实现了延时分辨率为10 ps、消光比分辨率为0.04 dB的高分辨率测量,为氮化硅微环在微波光子波束形成系统中的测试及应用提供了重要的参考价值。

The tunable delay of the silicon nitride micro-ring can be indirectly obtained by measuring the phase characteristics with the high-frequency resolution optical vector-network analysis method. However, the delay-spectrum-measurement stability of the silicon nitride micro-ring is seriously affected by some factors such as phase noise, laser-carrier-frequency fluctuation, and signal-to-noise ratio of the measurement system. This study experimentally analyzes these effects on the delay spectrum measurement of the silicon nitride micro-ring. By optimizing the measurement system and data processing method, a high-resolution measurement is achieved with delay and extinction ratio resolutions of approximately 10 ps and 0.04 dB, respectively. This work provides important reference value for the silicon nitride micro-ring measurement and paves the way for its applications in microwave photonic beamforming systems.