激光与光电子学进展, 2017, 54 (2): 023401, 网络出版: 2017-02-10  

极紫外光刻动态气体锁抑制率的仿真研究 下载: 567次

Simulation Investigation on Suppression Ratio of Dynamic Gas Lock in Extreme Ultraviolet Lithography
陈进新 1,2,*王宇 1谢婉露 1,2
作者单位
1 中国科学院光电研究院, 北京 100094
2 北京市准分子激光工程技术研究中心, 北京 100094
摘要
以清洁气体种类和流量以及污染气体放气率为变量, 进行了单组分清洁气体的动态气体锁(DGL)流场仿真, 并以混合清洁气体的体积比为变量进行了多组分清洁气体DGL流场仿真。仿真结果表明, DGL抑制率随清洁气体流量和分子量的增加而增加, 但与污染气体放气率的变化无关。对于多组分清洁气体, 当大分子量清洁气体的体积分数增加时,DGL抑制率近似不变。在实际工程中建议以氢气和氩气的混合气体作为DGL的清洁气体。当清洁气体流量为6.5 Pa·m3·s-1时, 约25%的清洁气体流入硅片室, DGL抑制率约为75%。该仿真结果为研制极紫外光刻机DGL提供了依据。
Abstract
The flow-field of dynamic gas lock (DGL) of single-component purge gas is simulated with the type and flux of purge gas and the outgassing rate of dirty gases as variables, and that of multi-component purge gas is also simulated with the volume ratio of mixed purge gases as variable. The simulation results indicate that, for single-component purge gas, the suppression ratio of DGL increases with the increment of gas flux and molecular weight, but has no relation to the outgassing rate of dirty gas. As for the multi-component purge gas, the suppression ratio of DGL approximately remains constant with the increment of volume fraction of the purge gas with large molecular weight. As for the practical application in engineering, it is recommended to use argon-hydrogen mixture as the purge gas in DGL. When the purge gas flux reaches 6.5 Pa·m3·s-1, nearly 25% of the purge gas flows into wafer-stage chamber and the suppression ratio of DGL is more or less 75%. This simulation result provides a basis for the development of DGL in extreme ultraviolet lithography.

陈进新, 王宇, 谢婉露. 极紫外光刻动态气体锁抑制率的仿真研究[J]. 激光与光电子学进展, 2017, 54(2): 023401. Chen Jinxin, Wang Yu, Xie Wanlu. Simulation Investigation on Suppression Ratio of Dynamic Gas Lock in Extreme Ultraviolet Lithography[J]. Laser & Optoelectronics Progress, 2017, 54(2): 023401.

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