激光与光电子学进展, 2018, 55 (3): 033101, 网络出版: 2018-09-10
基于原子层沉积的大曲率基底表面薄膜均匀性研究 下载: 1212次
Study of Film Uniformity on Large-Curvature Substrate Surface Based on Atomic Layer Deposition
薄膜 原子层沉积 流场分析 均匀性 大曲率基底 thin films atomic layer deposition flow-field analysis uniformity large-curvature substrate
摘要
通过建立原子层沉积(ALD)脉冲气体流场理论模型,分析了沉积过程中前驱体浓度的变化趋势,得到了原子层沉积腔中的优化沉积区域。在此基础上,开展了半球基底上Al2O3和TiO2薄膜的均匀性实验。实验结果表明, 最佳优化区域内Al2O3和TiO2薄膜的最大非均匀性分别为1.81%和1.74%,相比于非优化区域分别减小了47.1%和50.8%。当入射激光与半球中心轴的夹角为θ =0°时,制备的减反膜反射率在550 nm处达到最小值0.04%,θ =60°时反射率最大,为0.5%,而在其余位置反射率曲线均存在不同程度的偏移,当θ =60°时,偏移最大,为6 nm。
Abstract
Based on the construction of flow-field theoretical model of pulsed gas in atomic layer deposition (ALD), the variation trend of precursor concentration in the ALD process is analyzed, and an optimized deposition area in the ALD chamber is obtained. Based on this, the uniformity experiment of Al2O3 and TiO2 films on the hemispheric substrate is conducted. The experimental results show that the maximum inhomogeneities of the Al2O3 and TiO2 films in the best optimized area are 1.81% and 1.74%, respectively, which decrease by 47.1% and 50.8%, respectively, compared with those in the unoptimized areas. When the angle θ between the incident laser and the hemispheric central axis is 0°, the reflectivity of the prepared antireflection films at 550 nm reaches a minimum value of 0.04%; when θ is 60°, the reflectivity reaches a maximum value of 0.5%. There exist shifts with different agrees in the reflectance curves at other places, and the shift reaches a maximum value of 6 nm when θ is 60°.
来邻, 李旸晖, 周辉, 夏浩盛, 刘小煜, 夏成樑, 王乐. 基于原子层沉积的大曲率基底表面薄膜均匀性研究[J]. 激光与光电子学进展, 2018, 55(3): 033101. Lin Lai, Yanghui Li, Hui Zhou, Haosheng Xia, Xiaoyu Liu, Chengliang Xia, Le Wang. Study of Film Uniformity on Large-Curvature Substrate Surface Based on Atomic Layer Deposition[J]. Laser & Optoelectronics Progress, 2018, 55(3): 033101.