采用有限元数值模拟方法, 对一维In0.3Ga0.7As太阳能电池在1070 nm连续激光辐照下的输出特性进行了研究。通过计算零偏压下太阳能电池内部的载流子复合速率分布, 验证了模型的有效性。基于该模型研究了偏压对载流子复合速率分布的影响及太阳能电池结构对光电转换性能的影响。计算得到了在100 mW/cm2激光功率密度下太阳能电池的电流密度-电压曲线。研究结果表明, 随着正向偏压的增大, 空间电荷区的复合速率迅速增大, 因此正向偏压是影响激光电转换效率的主要因素; 电池的短路电流随着pn结深的增大呈指数衰减, 而开路电压随着基区厚度的增大先增大后趋于饱和。这些研究为太阳能电池的设计提供了参考。

The output characteristics of the one-dimensional In0.3Ga0.7As solar cells irradiated by a continuous wave (CW) laser with a wavelength of 1070 nm are studied by the finite element numerical simulation method. The validity of the model is verified by the calculation of the distribution of the recombination rate of the internal carrier in solar cells under a zero-bias. The effect of the bias voltage on the carrier recombination rate distribution and the influence of the structure of the solar cell on the photoelectric conversion performance are studied, and the current density-voltage curve of the solar cell is obtained under a laser power density of 100 mW·cm-2. The research results show that, with the increase of the forward bias, the recombination rate in the space charge region increases rapidly, so the forward bias is the main factor which influences the conversion efficiency. The short-circuit current of the cell decreases exponentially with the increase of the depth of the pn junction, however the open circuit voltage increases first and then tends to saturation with the increase of the thickness of the base area. These results provide a reference for the design of solar cells.