报道了最大输出功率为1.3 W,波长为910~930 nm的单频、可调谐锥形半导体激光放大系统,研究了锥形半导体放大系统输出功率随注入电流和种子光功率的变化。功率为13.6 mW、波长为920 nm的单频种子光经隔离器和聚焦透镜后,功率减小为12.4 mW;入射到注入电流为4 A的锥形放大器中时,输出激光的功率可达1300 mW,增益达到20.21 dB,线宽为660 fm。当种子光功率从0增大到13.6 mW时,放大功率随之增大。该系统获得的激光可以用于四倍频后窄线宽连续可调谐中(深)紫外激光的研究。

The single-frequency tunable tapered semiconductor laser amplification system with maximum output power of 1.3 W and wavelength of 910-930 nm is reported, and variations in the output power of tapered semiconductor amplifier with the injection current and seeding power are experimentally investigated. Through the isolator and focusing lens, the 13.6 mW single-frequency seeding light at 920 nm decreases to a power of 12.4 mW. The output power of the amplifier with injection current of 4 A can reach 1300 mW, the gain is up to 20.21 dB, and the linewidth is 660 fm. Moreover, when the seeding power increases from 0 to 13.6 mW, the amplification power increases accordingly. The laser obtained by this system can be used to study the narrow linewidth continuously tunable medium (deep) ultraviolet laser after quadrupling.