中国激光, 2018, 45 (8): 0802003, 网络出版: 2018-08-11
355 nm全固态紫外激光直写刻蚀硼硅玻璃微通道 下载: 969次
355 nm All-Solid-State Ultraviolet Laser Direct Writing and Etching of Micro-Channels in Borosilicate Glass
激光技术 激光制造 全固态紫外激光 硼硅玻璃 微通道刻蚀 laser technique laser manufacturing all-solid-state ultraviolet laser borosilicate glass micro-channel etching
摘要
利用355 nm全固态紫外激光对硼硅玻璃进行了直写刻蚀实验,采用单一变量法探究了激光能量密度、重复频率、扫描速度、扫描间距、扫描次数对刻蚀结果的影响。研究结果表明,激光能量密度过大时,玻璃易发生严重的崩边裂损现象; 等离子体屏蔽效应随激光能量密度的增大而增强,刻蚀深度减小; 随着重复频率的减小,通道边缘碎裂的现象减轻,刻蚀深度增大; 减小扫描间距可有效改善沟道底面的平整度; 刻蚀深度随扫描次数的增多而增大,同时沟道锥度增大。在较优的加工参数下,实现了宽度为84.8 μm,刻蚀深度为178 μm,底面较平整,沟道垂直度达89.580°的L型微通道的直写刻蚀。
Abstract
An experiment of 355 nm all-solid-state ultraviolet laser direct writing and etching of borosilicate glass is conducted to investigate the effects of laser energy density, repetition frequency, scanning speed, scanning distance and number of scanning on the etching results based on the single variable method. The research results show that, serious collapse phenomena occur in glass if laser energy density is too large. The plasma shielding effect increases and the etching depth decreases with the increase of laser energy density. With the decrease of repetition frequency, the channel edge fragmentation gradually reduces and the etching depth increases. The reduction of scanning distance can effectively improve the channel bottom surface flatness. The etching depth increases with the increase of number of scanning and simultaneously the channel taper increases. Under the optimal processing parameters, the direct writing and etching of L-shaped micro-channel with a width of 84.8 μm, an etching depth of 178 μm, a flat bottom surface and a channel verticality of 89.580° is realized.
李奇思, 梁庭, 雷程, 李旺旺, 林立娜, 杨娇燕, 熊继军. 355 nm全固态紫外激光直写刻蚀硼硅玻璃微通道[J]. 中国激光, 2018, 45(8): 0802003. Li Qisi, Liang Ting, Lei Cheng, Li Wangwang, Lin Lina, Yang Jiaoyan, Xiong Jijun. 355 nm All-Solid-State Ultraviolet Laser Direct Writing and Etching of Micro-Channels in Borosilicate Glass[J]. Chinese Journal of Lasers, 2018, 45(8): 0802003.