中国激光, 2018, 45 (8): 0801006, 网络出版: 2018-08-11
高性能976 nm宽条半导体激光芯片 下载: 1076次
976 nm Wide-Stripe Semiconductor Laser with High-Performance
激光器 半导体激光器 电光转换效率 亮度 腔面灾变功率 lasers semiconductor laser photoelectric conversion efficiency brightness catastrophic optical damage power
摘要
设计并制作了波长为976 nm的宽条大功率半导体激光芯片。采用非对称宽波导外延结构设计及金属有机化学气相外延技术生长了低损耗、高效率的外延材料。制备了190 μm发光区宽度、4 mm腔长、976 nm波长的半导体激光芯片,并将其封装为COS器件。测试结果表明:封装器件在室温下的阈值电流为1.05 A,斜率效率为1.12 W/A,最高电光转换效率可达到68.5%; 在40 ℃、19.5 W功率输出时的电光转换效率可以达到60%; 9个器件在40 ℃和15 A电流下老化4740 h后,无一失效,而且老化前后的功率-电流曲线和光谱没有变化,证明该激光芯片具极高的稳定性和可靠性。
Abstract
Semiconductor laser chips with 976 nm wavelength, broad stripe and high power are designed and realized. The epitaxial structure design of an asymmetric and large waveguide, and metal organic chemical vapor phase epitaxy technology are used to grow epitaxial materials with low loss and high conversion efficiency. The semiconductor laser chips with 190 μm stripe width, 4 mm length and 976 nm wavelength are packaged and packaged as chip-on-submount. The test results show that the threshold current of package-device at room temperature is 1.05 A, slope efficiency is 1.12 W/A, and the maximum conversion efficiency is 68.5%. Even at the elevated temperature of 40 ℃ and the output power of 19.5 W, the conversion efficiency reaches 60%. Nine devices are aging-tested at 40 ℃ and 15 A for 4740 hours, and no failure occurs. There are no changes in power-current curves and spectra before and after aging-test, which proves high stability and reliability of the laser chips.
胡海, 仇伯仓, 何晋国, 汪卫敏, 赵楚中, 刘文斌, 邝朗醒, 白雪. 高性能976 nm宽条半导体激光芯片[J]. 中国激光, 2018, 45(8): 0801006. Hu Hai, Qiu Bocang, He Jinguo, Wang Weimin, Zhao Chuzhong, Liu Wenbin, Kuang Langxing, Bai Xue. 976 nm Wide-Stripe Semiconductor Laser with High-Performance[J]. Chinese Journal of Lasers, 2018, 45(8): 0801006.