中国激光, 2018, 45 (8): 0801006, 网络出版: 2018-08-11   

高性能976 nm宽条半导体激光芯片 下载: 1076次

976 nm Wide-Stripe Semiconductor Laser with High-Performance
作者单位
1 深圳清华大学研究院, 广东 深圳 518057
2 深圳瑞波光电子有限公司, 广东 深圳 518055
3 广东省光机电一体化重点实验室, 广东 深圳 518057
摘要
设计并制作了波长为976 nm的宽条大功率半导体激光芯片。采用非对称宽波导外延结构设计及金属有机化学气相外延技术生长了低损耗、高效率的外延材料。制备了190 μm发光区宽度、4 mm腔长、976 nm波长的半导体激光芯片,并将其封装为COS器件。测试结果表明:封装器件在室温下的阈值电流为1.05 A,斜率效率为1.12 W/A,最高电光转换效率可达到68.5%; 在40 ℃、19.5 W功率输出时的电光转换效率可以达到60%; 9个器件在40 ℃和15 A电流下老化4740 h后,无一失效,而且老化前后的功率-电流曲线和光谱没有变化,证明该激光芯片具极高的稳定性和可靠性。
Abstract
Semiconductor laser chips with 976 nm wavelength, broad stripe and high power are designed and realized. The epitaxial structure design of an asymmetric and large waveguide, and metal organic chemical vapor phase epitaxy technology are used to grow epitaxial materials with low loss and high conversion efficiency. The semiconductor laser chips with 190 μm stripe width, 4 mm length and 976 nm wavelength are packaged and packaged as chip-on-submount. The test results show that the threshold current of package-device at room temperature is 1.05 A, slope efficiency is 1.12 W/A, and the maximum conversion efficiency is 68.5%. Even at the elevated temperature of 40 ℃ and the output power of 19.5 W, the conversion efficiency reaches 60%. Nine devices are aging-tested at 40 ℃ and 15 A for 4740 hours, and no failure occurs. There are no changes in power-current curves and spectra before and after aging-test, which proves high stability and reliability of the laser chips.

胡海, 仇伯仓, 何晋国, 汪卫敏, 赵楚中, 刘文斌, 邝朗醒, 白雪. 高性能976 nm宽条半导体激光芯片[J]. 中国激光, 2018, 45(8): 0801006. Hu Hai, Qiu Bocang, He Jinguo, Wang Weimin, Zhao Chuzhong, Liu Wenbin, Kuang Langxing, Bai Xue. 976 nm Wide-Stripe Semiconductor Laser with High-Performance[J]. Chinese Journal of Lasers, 2018, 45(8): 0801006.

本文已被 2 篇论文引用
被引统计数据来源于中国光学期刊网
引用该论文: TXT   |   EndNote

相关论文

加载中...

关于本站 Cookie 的使用提示

中国光学期刊网使用基于 cookie 的技术来更好地为您提供各项服务,点击此处了解我们的隐私策略。 如您需继续使用本网站,请您授权我们使用本地 cookie 来保存部分信息。
全站搜索
您最值得信赖的光电行业旗舰网络服务平台!