中国激光, 2018, 45 (9): 0902002, 网络出版: 2018-09-08
室温脉冲激光沉积法合成Bi3.95Er0.05Ti3O12薄膜及其介电性能研究 下载: 635次
Bi3.95Er0.05Ti3O12 Thin Films Synthesized by Pulsed Laser Deposition Technique and Their Dielectric Properties at Room Temperature
激光技术 薄膜 脉冲激光沉积 室温 介电性能 laser technique thin films pulsed laser deposition room temperature dielectric properties
摘要
采用脉冲激光沉积法, 室温条件下在透明导电玻璃衬底上制备了Bi3.95Er0.05Ti3O12(BErT)薄膜。研究结果表明, 低沉积氧气压下制备的BErT薄膜表面致密, 平整无裂缝, 且呈非晶结构; 当沉积氧气压为3 Pa时, BErT薄膜厚度约为180 nm, 表现出优秀的介电性能, 即当测试频率为1 kHz时, 室温介电常数为52, 介电损耗为0.025。同时, BErT薄膜的介电性能随频率、电压和温度的变化比较稳定, 在可见光区间具有较高的透过率。
Abstract
The Bi3.95Er0.05Ti3O12 (BErT) thin films are prepared on the indium-tin-oxide (ITO)-coated glass substrates at room temperature by the pulsed laser deposition technique. The research results show that, the BErT thin film prepared under a low deposition oxygen pressure possesses a dense and uniform surface without cracks, and an amorphous structure. Under a 3 Pa deposition oxygen pressure, the BErT thin film has a thickness of about 180 nm and shows outstanding dielectric characteristics, such as a dielectric constant of 52 at room temperature and a dielectric loss of 0.025 at the test frequency of 1 kHz. Meanwhile, the dielectric properties of the BErT thin film show a relative stability when the frequency, the voltage and the temperature change and also has a relatively high optical transmissivity in the visible light regime.
梁立容, 魏爱香, 莫忠. 室温脉冲激光沉积法合成Bi3.95Er0.05Ti3O12薄膜及其介电性能研究[J]. 中国激光, 2018, 45(9): 0902002. Liang Lirong, Wei Aixiang, Mo Zhong. Bi3.95Er0.05Ti3O12 Thin Films Synthesized by Pulsed Laser Deposition Technique and Their Dielectric Properties at Room Temperature[J]. Chinese Journal of Lasers, 2018, 45(9): 0902002.