介绍了基于InGaAs单光子探测器的日光条件测距实验，通过压缩激光接收视场、使用超窄带滤光片、结合超快主动淬灭电路等降低InGaAs单光子探测器死时间的方法，成功地进行了基于InGaAs单光子探测器的日光条件光子计数测距实验。分析实验数据，分别获取基于InGaAs探测器和Si基探测器的系统探测灵敏度、系统测距精度等参数，并进行比较。实验结果表明：经过高速主动淬灭电路优化后的InGaAs探测器，其死时间与Si基探测器的死时间相当；在背景光噪声一定的情况下，使用InGaAs探测器可以提高系统的探测灵敏度，从而增加系统的最大测程；得益于InGaAs探测器的低抖动时间，在提高系统最大测程的同时，系统的测距精度不受影响。

The photon counting experiment based on the InGaAs single photon avalanche diode in daylight is introduced. The dead time of the InGaAs single photon detector is reduced by ultra-fast active quenching circuits, and thus the photon counting experiment based on the InGaAs single photon detector in daylight is successfully conducted via the compression of field of view, the usage of ultra-narrow band filters and the reduction of dead time. The acquired experimental data are analyzed. The InGaAs-based system parameters such as detection sensitivity and ranging accuracy are also analyzed and compared with the parameters for the system based on Si-based single photon detectors. The experimental results show that the InGaAs detector after optimization by the high-speed active quenching circuit has a dead time comparable to that of the Si-based detector. In the case of a certain background light noise, the InGaAs detector can be used to increase the detection sensitivity and the maximum detection range of the system. Thanks to the low jitter time of InGaAs detectors, the ranging accuracy of the system is not affected while increasing its maximum detection range.