模拟分析了大功率半导体激光器的稳态温度场, 通过温度场计算半导体激光器的热透镜焦距及其对慢轴发散角的变化量, 并获得半导体激光器的热功率及其关系。分析表明, 相同条件下热功率与热透镜焦距近似为反比关系, 与慢轴光束发散角近似为线性关系。当热功率达到10 W时, 热透镜焦距为568 μm, 慢轴发散角增加约10°。实验测量了不同工作电流条件下激光器的慢轴发散角, 结果显示模拟值与实验值基本一致。

The steady-state temperature distribution of high-power semiconductor lasers is simulated, the thermal lens focal length and the variation of the slow axis divergence angle are calculated with the temperature distribution under different thermal power conditions. Results show that, under the same conditions the thermal power and the thermal lens focal length are approximately inversely proportional, and the slow axis divergence angle is approximately linear with thermal power. When the thermal power reaches 10 W, the thermal lens focal length is 568 μm, and the slow axis divergence angle increases about 10°. The slow axis divergence angle of the laser under different working current conditions is measured and the results show that the simulated values are consistent with the experimental values.